Dr. Hang Chi is a Research Scientist at Massachusetts Institute of Technology. He received his B.S. in Physics from Peking University, China, Ph.D. in Physics from the University of Michigan, Ann Arbor, and joined MIT in 2018 at the Francis Bitter Magnet Laboratory (FBML), Plasma Science and Fusion Center (PSFC).

He envisions magnetically proximitized quantum interfaces for building next-generation magnetic memory/logic devices with superior performance and efficiency as well as magnetic superconducting interface for non-reciprocal superconducting devices and quantum information and computation.

Currently, he is particularly interested in the marriage of topology and magnetism that leads to fascinating Berry physics in both real and reciprocal spaces, combining ab initio simulations; crystal growth, thin film deposition and device fabrication; structural, magnetic, transport, advanced neutron, muon, STM characterizations of extraordinary surface and interfaces.

He has contributed to 60+ chapter and journal articles in Science, Adv. Mater., Nat. Commun., JACS, PRL etc. (7,000+ citations and h-index = 35, Google Scholar); served as a frequent referee for 40+ leading journals including Science, PRL, as well as an evaluator of grant proposals for ARO etc.

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